Photoluminescence mapping study of gettering effect of polycrystalline Si on ultrathin silicon-on-insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1831556
Reference12 articles.
1. Silicon-on-Insulator Technology: Materials to VLSI
2. Frontiers of silicon-on-insulator
3. Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs
4. Mechanisms of transition-metal gettering in silicon
5. Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence mapping of mid-wave infrared InAs/GaSb type II superlattice: Influence of materials and processes on spatial uniformity;Journal of Alloys and Compounds;2023-06
2. Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory;Applied Physics Letters;2017-11-06
3. Gettering in silicon-on-insulator wafers with polysilicon layer;Materials Science and Engineering: B;2009-03
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