Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes-Reference-Cited by-同舟云学术

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Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes

Published:2012-10-15 Issue:8 Volume:112 Page:083101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Lei,Wang Lei,Liu Ningyang,Yang Wei,Li Ding,Chen Weihua,Chuan Feng Zhe,Lee Yueh-Chien,Ferguson Ian,Hu Xiaodong

Funder

National Natural Science Foundation of China

National Science Council Taiwan

National Basic Research Program of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4759373

Reference31 articles.

1. The Blue Laser Diode

2. Solid-State Light Sources Getting Smart

3. Nitride-based semiconductors for blue and green light-emitting devices

4. InGaN-GaN multiquantum-well blue and green light-emitting diodes

5. Enhanced device performance of GaInN-based deep green light emitting diodes with V-defect-free active region

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1. Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method;Science and Technology of Advanced Materials: Methods;2024-02-14

2. Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage;Japanese Journal of Applied Physics;2023-12-21

3. Wide-spectrum and high-homogeneity InGaN tunnel-junction light-emitting diode stacked by two unit light-emitting diodes;Micro and Nanostructures;2022-07

4. Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy;Nanomaterials;2022-02-26

5. Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure;Nanomaterials;2021-11-28

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