Analysis of terrace size fluctuations of B-induced stripe structures on the Si (001) surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121870
Reference12 articles.
1. Striped Phase and Temperature Dependent Step Shape Transition on Highly B-Doped Si(001)-(2×1) Surfaces
2. Atomic configuration of segregated B on Si(001) surface
3. Comb-shape step formation on Si(001)-2 × 1 surface
4. Step Faceting at the (001) Surface of Boron Doped Silicon
5. Spontaneous Formation of Stress Domains on Crystal Surfaces
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1. Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114);Surface Science;2003-11
2. Effect of laser annealing on delta-doped boron for super-steep-retrograded well formation using selective Si epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
3. Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure;Applied Physics Letters;2001-12-03
4. Step rearrangement on Si(001) surface during diborane exposure;Surface Science;2000-11
5. Scanning tunneling microscopy studies of ultrathin gate oxide films grown on highly B-doped Si(100) substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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