Pair‐groove‐substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96018
Reference9 articles.
1. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
2. A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam
3. Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy
4. GaAlAs buried multiquantum well lasers fabricated by diffusion‐induced disordering
5. Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy
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1. Low‐temperature homoepitaxial growth on nonplanar Si substrates;Journal of Applied Physics;1994-11
2. Chapter 4 Lateral Patterning of Quantum Well Heterostructures by Growth on Nonplanar Substrates;Semiconductors and Semimetals;1994
3. Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures;Thin Solid Films;1993-08
4. Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication;Japanese Journal of Applied Physics;1993-08-01
5. Insituapproach to realization of three‐dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates;Applied Physics Letters;1993-03-29
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