Comprehensive study of Ohmic electrical characteristics and optimization of Ti∕Al∕Mo∕Au multilayer Ohmics on undoped AlGaN∕GaN heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2035314
Reference7 articles.
1. Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN
2. Low Resistance Ti/Al/Mo/Au Ohmic Contacts for AlGaN/GaN Heterostructure Field Effect Transistors
3. Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line model
4. H. H. Berger, IEEE International Solid-State Circuit Conference, Pennsylvania, 21 February 1969 (unpublished), pp. 160–161.
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2. Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals;Applied Physics Letters;2022-01-31
3. Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices;Applied Physics Letters;2021-07-12
4. Crystallized Ohmic Contact Effect in AlGaN/GaN High Electron Mobility Transistor;Japanese Journal of Applied Physics;2013-08-01
5. Prepassivated AlGaN/GaN HEMTs with improved edge acuity in annealed ohmic contacts;Electronics Letters;2011
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