InAs–GaSb laser: Prospects for efficient terahertz emission
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2993232
Reference10 articles.
1. Band structure of coupled InAs/GaSb quantum wells
2. Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems
3. High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
4. Terahertz quantum cascade lasers—first demonstration and novel concepts
5. 1.9THz quantum-cascade lasers with one-well injector
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1. Fundamental limitations on gain of terahertz quantum cascade lasers;Journal of Applied Physics;2023-08-08
2. Terahertz radiation generation from metallic electronic structure manipulated by inhomogeneous DC-fields;Scientific Reports;2021-03-23
3. Photon-enhanced thermionic emission from p-GaAs with nonequilibrium Cs overlayers;Applied Physics Letters;2014-12-22
4. Bipolar THz-Lasing Structures Based on InAs-GaSb Coupled Quantum Wells and Their Potential for Security Checks;NATO Science for Peace and Security Series B: Physics and Biophysics;2014
5. Bipolar THz-lasing structures based on InAs-GaSb coupled quantum wells as an alternative to intersubband lasing;SPIE Proceedings;2013-09-24
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