Elimination of dislocations in heteroepitaxial layers by the controlled introduction of interfacial misfit dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655171
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4. Like‐sign asymmetric dislocations in zinc‐blende structure
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2. Defect reduction in ZnMgSSe epilayers on GaAs by using ZnMgSe/ZnSSe strained-layer superlattices;Solid State Communications;1996-12
3. Liquid‐phase epitaxial growth of AlGaAsP with application to InGaP/AlGaAsP single heterostructure diodes;Journal of Applied Physics;1992-12-15
4. Growth by Liquid-Phase Epitaxy and Characterization of Al0.28Ga0.72As0.62P0.38;Japanese Journal of Applied Physics;1992-08-15
5. Control of threading dislocations in lattice-mismatched heteroepitaxy;MRS Proceedings;1992
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