Characterization of crystal defects at leakage sites in charge‐coupled devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323343
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5. Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O2Oxidation
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1. Effects of oxygen-related defects on the leakage current of silicon p/n junctions;Journal of Applied Physics;1998-09-15
2. Probing Metal Defects in CCD Image Sensors;MRS Proceedings;1995
3. Electrical Properties of “Clean” and Fe — Decorated Stacking Faults in P-Type Silicon;Crucial Issues in Semiconductor Materials and Processing Technologies;1992
4. Defect site competition for metal atoms in intrinsically gettered silicon: Numerical model;Journal of Applied Physics;1987-09
5. Characterization of the leakage-current diffusion component in intrinsically gettered silicon by EBIC;Physica Status Solidi (a);1987-02-16
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