Effects of oxygen-related defects on the leakage current of silicon p/n junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368470
Reference46 articles.
1. The Effect of the Crystal Grown‐in Defects on the Pause Tail Characteristics of Megabit Dynamic Random Access Memory Devices
2. Electrically Active Stacking Faults in Silicon
3. Oxidation‐induced stacking faults in silicon. II. Electrical effects in P N diodes
4. The Elimination of Stacking Faults by Preoxidation Gettering of Silicon Wafers: III . Defect Etch Pit Correlation with p‐n Junction Leakage
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