Morphology and chemical termination of HF-etched Si3N4 surfaces-Reference-Cited by-同舟云学术

Morphology and chemical termination of HF-etched Si3N4 surfaces

Published:2014-12-29 Issue:26 Volume:105 Page:261603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Li-Hong¹,Debenedetti William J. I.¹,Peixoto Tatiana¹,Gokalp Sumeyra¹,Shafiq Natis¹,Veyan Jean-François¹^ORCID,Michalak David J.²,Hourani Rami²,Chabal Yves J.¹

Affiliation:

1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA

2. Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905282

Reference24 articles.

1. Oxidation Studies of Crystalline CVD Silicon Nitride

2. Preparation and properties of clean Si3N4 surfaces

3. Tailor-Made Functionalization of Silicon Nitride Surfaces

4. Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

5. Ideal hydrogen termination of the Si (111) surface

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