Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature-Reference-Cited by-同舟云学术

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Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature

Published:2006-06-12 Issue:24 Volume:88 Page:241904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dhara S.,Magudapathy P.,Kesavamoorthy R.,Kalavathi S.,Sastry V. S.,Nair K. G. M.,Hsu G. M.,Chen L. C.,Chen K. H.,Santhakumar K.,Soga T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2186101

Reference18 articles.

1. Unusual properties of the fundamental band gap of InN

2. Electron transport in wurtzite indium nitride

3. The spectral p-n junction model for tandem solar-cell design

4. Thermal and plasma‐assisted nitridation of GaAs(100) using NH3

5. Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and phonon properties of InN synthesized by ion implantation in SiO2;Thin Solid Films;2015-11

2. Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions;Journal of Experimental Nanoscience;2012-07-18

3. Observation of NH2 species on tilted InN (011−1) facets;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-07

4. Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-11

5. Raman probe to estimate surface energies of embedded semiconductor nanostructures;Journal of Raman Spectroscopy;2009-10-19

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