Preparation of self‐aligned in‐line tunnel junctions for applications in single‐charge electronics-Reference-Cited by-同舟云学术

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Preparation of self‐aligned in‐line tunnel junctions for applications in single‐charge electronics

Published:1995-11 Issue:9 Volume:78 Page:5499-5502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Götz M.,Blüthner K.,Krech W.,Nowack A.,Fuchs H.‐J.,Kley E.‐B.,Thieme P.,Wagner Th.,Eska G.,Hecker K.,Hegger H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359666

Reference5 articles.

1. Offset masks for lift‐off photoprocessing

2. A DC SQUID with intrinsically shunted submicron junctions near the hysteretic limit exhibiting an extremely large dV/d phi transfer function

3. Observation of single-electron charging effects in small tunnel junctions

4. Miniature electrical filters for single electron devices

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double oxidation scheme for tunnel junction fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

2. Consideration of the “island” background charge in single-electron transistor simulation;Semiconductors;2001-04

3. Classification of single-electron devices;Semiconductors;1999-11

4. Design analysis of metallic single electron tunneling circuits;Applied Superconductivity;1999-10

5. Fabrication and measurement of metallic single electron transistors;IEEE Transactions on Appiled Superconductivity;1999-06

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