Consideration of the “island” background charge in single-electron transistor simulation-Reference-Cited by-同舟云学术

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Consideration of the “island” background charge in single-electron transistor simulation

Published:2001-04 Issue:4 Volume:35 Page:474-476
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Abramov I. I.,Novik E. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1365198.pdf

Reference9 articles.

1. NATO ASI Ser., Ser. B,1992

2. I. I. Abramov and E. G. Novik, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33(11), 1388 (1999) [Semiconductors 33, 1254 (1999)].

3. M. Amman and K. Mullen, J. Appl. Phys. 65, 339 (1989).

4. R. H. Chen and K. K. Likharev, Appl. Phys. Lett. 72, 61 (1998).

5. I. I. Abramov and E. G. Novik, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34(8), 1014 (2000) [Semiconductors 34, 975 (2000)].

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1. Single electron transistor: Energy-level broadening effect and thermionic contribution;Semiconductors;2017-12

2. Model of multi-island single-electron arrays based on the Monte Carlo method;Semiconductors;2003-05

3. Influence of the design and material parameters on the current-voltage characteristics of two-island single-electron chains;Semiconductors;2002-10

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