Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires-Reference-Cited by-同舟云学术

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Published:2014-12-15 Issue:24 Volume:105 Page:243106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mancini L.¹^ORCID,Fontana Y.²,Conesa-Boj S.²,Blum I.¹,Vurpillot F.¹,Francaviglia L.²^ORCID,Russo-Averchi E.²,Heiss M.²,Arbiol J.³⁴,Morral A. Fontcuberta i²^ORCID,Rigutti L.¹

Affiliation:

1. Groupe de Physique des Matériaux, UMR CNRS 6634, University and INSA of Rouen, Normandie University, 76800 St. Etienne du Rouvray, France

2. Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

3. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, CAT, Spain

4. Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, CAT, Spain

Funder

Agence Nationale de la Recherche (L' Agence Nationale de la Recherche)

Swiss National Science Foundation (Schweizerische Nationalfonds)

Generalitat de Catalunya (Government of Catalonia)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904952

Reference47 articles.

1. Spontaneous ordering of nanostructures on crystal surfaces

2. Design of a femtosecond laser assisted tomographic atom probe

3. Atom Probe Tomography of Electronic Materials

4. Atomic scale characterization of buried InxGa1−xAs quantum dots using pulsed laser atom probe tomography

5. Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures

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