(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124104
Reference9 articles.
1. Theory of conduction and breakdown in perovskite thin films
2. Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO3/Pt capacitors fabricated by sputtering process
3. Dielectric breakdown in high-ε films for ulsi DRAMs: III. Leakage current precursors and electrodes
4. Temperature-Dependent Current-Voltage Characteristics of Fully ProcessedBa0.7Sr0.3TiO3Capacitors Integrated in a Silicon Device
5. Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories
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3. Flexible (Ba0.7Sr0.3)TiO3 thick films with mechanically stable dielectric tunability;Journal of the Korean Physical Society;2022-08-18
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