Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma-Reference-Cited by-同舟云学术

Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma

Published:1998-03-09 Issue:10 Volume:72 Page:1143-1145
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cismaru C.,Shohet J. L.,Nauka K.,Friedmann J. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120996

Reference8 articles.

1. Thin-oxide damage from gate charging during plasma processing

2. Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher

3. Damage Caused by Stored Charge during ECR Plasma Etching

4. Dependence of Gate Oxide Breakdown Frequency on Ion Current Density Distributions during Electron Cyclotron Resonance Plasma Etching

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