Correlation of RF impedance with Ar plasma parameters in semiconductor etch equipment using inductively coupled plasma-Reference-Cited by-同舟云学术

Correlation of RF impedance with Ar plasma parameters in semiconductor etch equipment using inductively coupled plasma

Published:2021-02-01 Issue:2 Volume:11 Page:025027
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Lee Nayeon¹²,Kwon Ohyung¹^ORCID,Chung Chin-Wook²^ORCID

Affiliation:

1. Functional Materials and Components R&D Group, Gangwon Division, Korea Institute of Industrial Technology (KITECH), Gwahakdanji-ro 137-41, Gangneung-si, Gangwon-do 25440, South Korea

2. Department of Electrical Engineering, Hanyang University, 222 Wangsimri-ro, Seoul 04763, South Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/6.0000883

Reference15 articles.

1. Inside the mysterious world of plasma: A process engineer’s perspective

2. Measurement and analysis of radio frequency glow discharge electrical impedance and network power loss

3. Power dissipation and impedance measurements in radio‐frequency discharges

4. Characterization of an aluminum etching process in an inductively coupled discharge using measurements of discharge impedance and current and voltage sensors

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