Feasibility of an active-read approach for spin-torque switched magnetic tunnel junctions in a random access memory
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819888
Reference7 articles.
1. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
2. Evaluation of barrier uniformity in magnetic tunnel junctions prepared using natural oxidation of thin Mg layers
3. Magnetic tunnel junction design margin exploration for self-reference sensing scheme
4. Time-resolved magnetic relaxation of a nanomagnet on subnanosecond time scales
5. Theory of voltage-driven current and torque in magnetic tunnel junctions
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1. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching;Advances in Condensed Matter Physics;2016
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