Magnetic tunnel junction design margin exploration for self-reference sensing scheme
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3679647
Reference20 articles.
1. A 0.24-μm 2.0-V 1T1MTTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme
2. Measurement of the spin-transfer-torque vector in magnetic tunnel junctions
3. Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions
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1. A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28nm FDSOI;Microelectronics Reliability;2016-09
2. Feasibility of an active-read approach for spin-torque switched magnetic tunnel junctions in a random access memory;Journal of Applied Physics;2013-09-07
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