Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125150
Reference8 articles.
1. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
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3. Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions
4. Optical spectroscopy of two-dimensional electrons inGaAs−AlxGa1−xAssingle heterojunctions
5. Radiative recombination in doped AlGaAs/GaAs heterostructures
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