Fluid simulation of the plasma uniformity in new multi-directional source capacitively coupled plasma-Reference-Cited by-同舟云学术

Fluid simulation of the plasma uniformity in new multi-directional source capacitively coupled plasma

Published:2021-07-01 Issue:7 Volume:11 Page:075121
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Ouyang Wenchong¹^ORCID,Ding Chengbiao¹²^ORCID,Liu Qi¹^ORCID,Gao Shuzhan¹,Deng Weifeng³⁴^ORCID,Wu Zhengwei¹⁵^ORCID

Affiliation:

1. School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026, People’s Republic of China

2. Department of Rehabilitation Medicine, The Second Hospital of Anhui Medical University, Hefei, Anhui 230601, China

3. School of Aerospace Science and Technology, Xidian University, Xi’an 710071, China

4. The Key Laboratory of Information and Structure Efficiency in Extreme Environment, Ministry of Education of China, Xidian University, Xi’an 710071, China

5. CAS Key Laboratory of Geospace Environment, University of Science and Technology of China, Hefei 230026, People’s Republic of China

Funder

Anhui Provincial Key Research and Development Plan

Fundamental Research Funds for Central Universities of the

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0062272

Reference33 articles.

1. Distinct Molecular Structures of Edge and Middle Positions of Plasma Treated Covered Polymer Film Surfaces Relevant in the Microelectronics Industry

2. Josephson Tunneling Barriers by rf Sputter Etching in an Oxygen Plasma

3. Cold Plasma in Medicine and Healthcare: The New Frontier in Low Temperature Plasma Applications

4. Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2

5. Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

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