Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2207494
Reference11 articles.
1. On the origin of tunneling barriers in silicon single electron and single hole transistors
2. Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator
3. Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
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4. Electron–Hole Confinement Symmetry in Silicon Quantum Dots;Nano Letters;2015-07-10
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