Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1631395
Reference11 articles.
1. Single-electron devices and their applications
2. Coulomb blockade in low-mobility nanometer size Si MOSFET’s
3. Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire
4. Quantum mechanical effects in the silicon quantum dot in a single-electron transistor
5. Room temperature silicon single-electron quantum-dot transistor switch
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2. Synthesis and Characterization of Nanocrystals and Nanoparticles;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17
3. CMOS-Compatible Precise Placement of Ge Quantum Dots for Nanoelectronic, Nanophotonic, and Energy Conversion Devices;ECS Transactions;2013-03-15
4. Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system;Applied Physics Letters;2012-12-17
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