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High sensitivity measurement of implanted As in the presence of Ge in GexSi1−x/Si layered alloys using trace element accelerator mass spectrometry

  • Published:2000-12-11 Issue:24 Volume:77 Page:3974-3976
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Datar S. A.,Wu Liying,Guo B. N.,Nigam M.,Necsoiu D.,Zhai Y. J.,Smith D. E.,Yang C.,Bouanani M. E.,Lee J. J.,McDaniel F. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ION BEAM MATERIALS ANALYSIS AND MODIFICATIONS AT keV TO MeV ENERGIES AT THE UNIVERSITY OF NORTH TEXAS;International Journal of Modern Physics: Conference Series;2014-01

2. Trace Element Accelerator Mass Spectrometry;Characterization of Materials;2012-10-12

3. Mass Spectrometry in Semiconductor Research;Mass Spectrometry Handbook;2012-05-21

4. Issues and opportunities in accelerator mass spectrometry for stable isotopes;Mass Spectrometry Reviews;2008-06-13

5. Depth profiles of H, C, O, Al and Si implants in a GaN substrate using trace element accelerator mass spectrometry;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
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