Depth profiles of H, C, O, Al and Si implants in a GaN substrate using trace element accelerator mass spectrometry-Reference-Cited by-同舟云学术

Depth profiles of H, C, O, Al and Si implants in a GaN substrate using trace element accelerator mass spectrometry

Published:2004-06 Issue: Volume:219-220 Page:455-458
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mitchell Lee J.,Ravi Prasad G.V.,Pelicon Primoz,Smith Eric B.,McDaniel Floyd D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. G.V. Ravi Prasad, P. Pelicon, L.J. Mitchell, F.D. McDaniel, American Institute of Physics, Vol. 680, 2002, p. 369

2. F.D. McDaniel, G.V. Ravi Prasad, P. Pelicon, L.J. Mitchell, Indian Society of Mass Spectrometry, ISMAS-SJS-2003, 2003, p. 247

4. Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis;Wilson,1989

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3. Measurement of ultra-low potassium contaminations with Accelerator Mass Spectrometry;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2007-11