Correcting interface‐state errors in MOS doping profile determinations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662738
Reference14 articles.
1. Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements
2. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
3. A Limitation of the Pulsed Capacitance Technique of Measuring Impurity Profiles
4. Using the MIS capacitor for doping profile measurements with minimal interface state error
5. On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] Interfaces
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