CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States-Reference-Cited by-同舟云学术

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CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
language:
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Author:

Grasser T.,O'Sullivan B.,Kaczer B.,Franco J.,Stampfer B.,Waltl M.

Funder

Austrian Federal Ministry for Digital and Economic Affairs

Christian Doppler Research Association

Austrian Science Fund (FWF)

European Union

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405184.pdf?arnumber=9405184

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1. On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs;Materials Science Forum;2023-06-06

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