Be diffusion in molecular beam epitaxy-grown GaAs structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1572192
Reference26 articles.
1. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
2. Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy
3. Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability
4. Suppression of Be diffusion in molecular-beam epitaxy AlGaAs by the incorporation of In for heterojunction bipolar transistor applications
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2. Spin Injection and Relaxation in p -Doped (In,Ga)As/GaAs Quantum-Dot Spin Light-Emitting Diodes at Zero Magnetic Field;Physical Review Applied;2020-09-08
3. Connecting point defect parameters with bulk properties to describe diffusion in solids;Applied Physics Reviews;2016-12
4. Incorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
5. A thermodynamic approach of self- and hetero-diffusion in GaAs: connecting point defect parameters with bulk properties;RSC Advances;2016
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