Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide-Reference-Cited by-同舟云学术

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Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

Published:2014-06-23 Issue:25 Volume:104 Page:253903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liao Baochen¹²³,Hoex Bram¹,Aberle Armin G.¹²^ORCID,Chi Dongzhi³,Bhatia Charanjit S.¹²

Affiliation:

1. Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Singapore 117574

2. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576

3. A*STAR Institute of Materials Research and Engineering (IMRE), 3 Research Link, Singapore 117602

Funder

the National Research Foundation, Prime Minister's Office, Singapore under its Energy Innovation Research Programme

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference31 articles.

1. 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates

2. Very low bulk and surface recombination in oxidized silicon wafers

3. M. J. Kerr , PhD thesis, The Australian National University, 2002.

4. Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics

5. Comparison of TiO2 and other dielectric coatings for buried-contact solar cells: a review

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