Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3103332
Reference18 articles.
1. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
2. Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy
3. Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures
4. Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
5. Almost perfect epitaxial multilayers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well;Condensed Matter Physics;2015
2. Efficient simulation of the impact of interface grading on the transport and optical properties of semiconductor heterostructures;Applied Physics Letters;2014-06-09
3. Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces;Physical Review Letters;2012-09-18
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