Electron‐hole transition energies and atomic steps at the interfaces of thin InGaAs/InP quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102720
Reference5 articles.
1. Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low‐pressure organometallic vapor phase epitaxy
2. Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy
3. Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy
4. Dynamics of exciton transfer between monolayer‐flat islands in single quantum wells
5. Photoconductivity in InGaAs/InP quantum well heterostructures-inter-sub-band and sub-band-continuum transitions
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1. Transmission coefficient of electrons through a single graded barrier;Physical Review B;1993-09-15
2. Optical study of extended-molecular-layer flat islands in lattice-matchedIn0.53Ga0.47As/InP andIn0.53Ga0.47As/In1−xGaxAsyP1−yquantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles;Physical Review B;1992-10-15
3. Dynamics of carrier transport and carrier capture inIn1−xGaxAs/InP heterostructures;Physical Review B;1992-07-15
4. MOVPE in GaInAsP systems for opto-electronic applications;Microelectronic Engineering;1992-05
5. On the transmission coefficient of graded composition GaAs/AlxGa1−xAs heterojunctions under an electric field;Journal of Applied Physics;1992-04-15
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