Nitrogen acceptors confined in CdZnTe quantum well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361063
Reference15 articles.
1. Plasma nitrogen doping of ZnTe, Cd1−xZnxTe, and CdTe by molecular beam epitaxy
2. Photoluminescence andp‐type conductivity in CdTe:N grown by molecular beam epitaxy
3. Indium doping of CdTe and Cd1−xZnxTe by molecular‐beam epitaxy: Uniformly and planar‐doped layers, quantum wells, and superlattices
4. Observation of negatively charged excitonsX−in semiconductor quantum wells
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1. Trions, excitons, and scattering states in multiple quantum wells with a variable-concentration electron gas;Physical Review B;2004-06-03
2. Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum well structures;Journal of Applied Physics;2001-09
3. Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals;Journal of Materials Research;2001-08
4. Growth and doping of Te-based II–VI layers and quantum structures by molecular beam epitaxy;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
5. Interdiffusion mechanisms in CdTe/CdMgZnTe:N modulation-doped heterostructures;Journal of Applied Physics;2000-04-15
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