Minority‐carrier lifetime study of the pressure induced Γ‐Xcrossover in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95661
Reference9 articles.
1. Electrical Properties of the GaAsX1CMinima at Low Electric Fields from a High-Pressure Experiment
2. Dependence of the direct energy gap of GaAs on hydrostatic pressure
3. High pressure photoluminescence and resonant Raman study of GaAs
4. Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependence
5. Interfacial recombination at (AlGa)As/GaAs heterojunction structures
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2. Modeling of carrier lifetimes in uniaxially strained GaAs;Journal of Applied Physics;2012-05-15
3. Order-of-magnitude reduction of carrier lifetimes in [100] n-type GaAs shock-compressed to 4 GPa;Applied Physics Letters;2011-02-28
4. Transformation of GaAs into an indirectL-band-gap semiconductor under uniaxial strain;Physical Review B;2009-08-05
5. Calculated structural, electronic and optical properties of Ga-based semiconductors under pressure;Physica B: Condensed Matter;2008-09
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