Transformation of GaAs into an indirectL-band-gap semiconductor under uniaxial strain
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.073201/fulltext
Reference39 articles.
1. Effect of pressure on the low-temperature exciton absorption in GaAs
2. Ab initiostudy ofΓ−Xintervalley scattering in GaAs under pressure
3. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
4. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
5. Study of defects and strain relaxation in GaAs/InxGa1−xAs/GaAs heterostructures using photoluminescence, positron annihilation, and x-ray diffraction
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