V13O16phase and the thickness dependence of the V3Si formation rate in SiO2/V reactions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343428
Reference11 articles.
1. Formation of vanadium silicides by the interactions of V with bare and oxidized Si wafers
2. Kinetics of silicide formation by thin films of V on Si and SiO2 substrates
3. Reaction of thin metal films with SiO2 substrates
4. Reactions of Zr thin films with SiO2 substrates
5. Enhanced growth mechanism and superconducting properties of V3Si layers formed by sputter‐deposited V films on SiO2substrates
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