Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100072
Reference5 articles.
1. Laser‐induced degradation of GaAs photoluminescence
2. Extension of the rotational analysis of the 1Π-X1Σ+ system of AsN
3. Passivation of GaAs surfaces*
4. Correlations of photoluminescence with defect densities in semi-insulating gallium arsenide
5. Degradation of band‐gap photoluminescence in GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence fatigue and related degradation in thin-film photovoltaics;Journal of Applied Physics;2003-09-15
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3. Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)];Applied Physics Letters;1988-09-05
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