Analysis of optical gain threshold in n-doped and tensile-strained germanium heterostructure diodes
Author:
Affiliation:
1. Institut d'Electronique Fondamentale, CNRS Université Paris-Sud, Bâtiment 220, F-91405 Orsay, France
2. STMicroelectronics, Rue Jean Monnet, 38054 Crolles, France
Funder
ANR
ANRT CIFRE
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931580
Reference37 articles.
1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
2. Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser
3. An electrically pumped germanium laser
4. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
5. Enhanced photoluminescence of heavily n-doped germanium
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