HgCdTe photodiodes formed by double‐layer liquid phase epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91958
Reference5 articles.
1. Optically pumped LPE-grown Hg1−xCdxTe lasers
2. LPE growth of Hg0.60Cd0.40Te from Te‐rich solution
3. Current controlled liquid phase epitaxial growth of Hgl−xCdxTe
4. Liquid Phase Growth of HgCdTe Epitaxial Layers
5. Backside‐illuminated HgCdTe/CdTe photodiodes
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1. Indium doped Hg0.7Cd0.3Te/undoped Hg0.8Cd0.2Te/CdTe heterojunction grown by Te-rich liquid phase epitaxy;Journal of Crystal Growth;1994-04
2. Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodes;Infrared Physics;1988-05
3. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01
4. Recent developments in HgCdTe and HgZnTe growth from Te solutions;Journal of Crystal Growth;1988-01
5. Photovoltaic effect and carrier transport mechanisms in Hg1-Mnxtdiodes;Journal of Electronic Materials;1987-11
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