Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4861746
Reference34 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
3. N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier
4. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
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