Heat‐treatment behavior of microdefects and residual impurities in CZ silicon crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325925
Reference8 articles.
1. Silicon material problems in semiconductor device technology
2. Impurity Clustering Effects on the Anomalous Transmission of X Rays in Silicon
3. Oxygen precipitation and the generation of dislocations in silicon
4. A model for the formation of stacking faults in silicon
5. Role of point defects in the growth of the oxidation-induced stacking faults in silicon
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