Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334853
Reference13 articles.
1. Quantum-well heterostructure lasers
2. Quantum-well heterostructure lasers
3. Interdiffusion between GaAs and AlAs
4. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
5. Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing
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2. Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short‐period superlattices with different encapsulants;Journal of Applied Physics;1996-07-15
3. High‐performance diffusion disordered AlxGa1−xAs lasers via a self‐aligned process and conventional open‐tube annealing;Journal of Applied Physics;1993-02-15
4. Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers;Applied Physics Letters;1991-04-22
5. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
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