Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN-Reference-Cited by-同舟云学术

Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN

Published:2010-11-15 Issue:10 Volume:108 Page:104304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dimitrakopulos G. P.,Kalesaki E.,Kioseoglou J.,Kehagias Th.,Lotsari A.,Lahourcade L.,Monroy E.,Häusler I.,Kirmse H.,Neumann W.,Jurczak G.,Young T. D.,Dłużewski P.,Komninou Ph.,Karakostas Th.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3506686

Reference40 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Nitride emitters go nonpolar

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate

5. Nonpolar and Semipolar Group III Nitride-Based Materials

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