Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

Author:

Sun Jiandong1,Zhang Zhipeng1,Li Xiang12ORCID,Qin Hua1,Sun Yunfei3,Cai Yong1,Yu Guohao1,Zhang Zhili1,Zhang Jinfeng1,Shangguan Yang1,Jin Lin1,Li Xinxing1,Zhang Baoshun1,Popov V. V.4ORCID

Affiliation:

1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, People's Republic of China

2. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, People's Republic of China

3. College of Electronic and Information Engineering, Suzhou University of Sciences and Technology, Suzhou 215009, People's Republic of China

4. Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences, Saratov 410019, Russia

Funder

the National Key Research and Development Program of China

the China National Natural Science Foundation

The Youth Innovation Promotion Association CAS

the Six Talent Peaks Project of Jiangsu Province, China

the Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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