A microwave comb generator based on AlGaN/GaN heterostructure Schottky diodes nonlinear transmission line
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Published:2023-07-01
Issue:7
Volume:16
Page:074001
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ISSN:1882-0778
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Container-title:Applied Physics Express
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language:
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Short-container-title:Appl. Phys. Express
Author:
Xiang Lanyong,
Zhu Yifan,
Ding QingfengORCID,
Luo Yanxiang,
Sun Jiandong,
Zeng Zhongming,
Zhang Jinfeng,
Li XinxingORCID,
Jin Lin,
Shangguan Yang,
Qin Hua
Abstract
Abstract
We report a microwave nonlinear transmission line (NLTL) based on AlGaN/GaN Schottky-barrier diodes. As a comb generator, the NLTL produces a frequency comb from 4 to 40 GHz at an input frequency of 4 GHz. The power of harmonics from 28 to 40 GHz exceeds that of commercial GaAs NLTL at an input power of 26 dBm. The power of harmonic starts to saturate as the input power increases to 33 dBm. Compared with the maximum input power of 26 dBm of commercial GaAs NLTLs, the comb generator based on AlGaN/GaN NLTL is more advantageous at a high input power.
Funder
Science and Technology Program of Suzhou
National Natural Science Foundation of China
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Subject
General Physics and Astronomy,General Engineering
Cited by
1 articles.
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