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Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

Published:2004-03-29 Issue:13 Volume:84 Page:2412-2414
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shimada Takashi,Sugai Toshiki,Ohno Yutaka,Kishimoto Shigeru,Mizutani Takashi,Yoshida Hiromichi,Okazaki Toshiya,Shinohara Hisanori

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1689404

Reference15 articles.

1. New Synthesis of High-Quality Double-Walled Carbon Nanotubes by High-Temperature Pulsed Arc Discharge

2. Room-temperature transistor based on a single carbon nanotube

3. Single- and multi-wall carbon nanotube field-effect transistors

4. Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown

5. Electrical properties and devices of large-diameter single-walled carbon nanotubes

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1. Converting Ambipolar Double‐Walled Nanotube Bundles to Unipolar Carbon Nanotube Field‐Effect Transistor Devices by Inner Functionalization;physica status solidi (a);2023-05-10

2. TEGylated Double-Walled Carbon Nanotubes as Platforms to Engineer Neuronal Networks;ACS Applied Materials & Interfaces;2022-10-21

3. Nanosynthesis by atmospheric arc discharges excited with pulsed-DC power: a review;Nanotechnology;2022-05-31

4. Seven Strategies to Suppress the Ambipolar Behaviour in CNTFETs: a Review;Silicon;2022-03-26

5. Double-Walled Carbon Nanotubes: Synthesis, Sorting, and Applications;Handbook of Carbon Nanotubes;2022

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