Converting Ambipolar Double‐Walled Nanotube Bundles to Unipolar Carbon Nanotube Field‐Effect Transistor Devices by Inner Functionalization

Abstract

Carbon nanotube (CNT)‐based transistor devices have been demonstrated and are seen as the next‐generation alternative to replace the current generation electronic devices based on silicon MOS technology. Their limitations, however, are related to their instability in ambient conditions and technical challenges in scaling up production of individual CNT devices. Herein, a simple technique to convert ambipolar (both n‐ and p‐carrier) individual CNT‐based transistors into unipolar (p‐type carrier) transistors that carry large currents ≈±7 mA before saturation is demonstrated. Such large current‐carrying capability from an individual or single‐bundle CNTs will be ideal for applications that require high currents such as output stages of radio frequency (RF) and audio amplifiers. This work highlights the ability to tune CNT‐based transistor devices to suit specific applications, which is essential for the development of next generation of nanoelectronics.