The microstructural changes of Ge2Sb2Te5 thin film during crystallization process
Author:
Affiliation:
1. Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China
2. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5025204
Reference23 articles.
1. The gradual nature of threshold switching
2. Breaking the Speed Limits of Phase-Change Memory
3. Reversible Electrical Switching Phenomena in Disordered Structures
4. Phase change materials: From material science to novel storage devices
5. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
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