Insertion of a Si layer to reduce operation current for resistive random access memory applications-Reference-Cited by-同舟云学术

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Insertion of a Si layer to reduce operation current for resistive random access memory applications

Published:2013-06-24 Issue:25 Volume:102 Page:252902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Yu-Ting,Chang Ting-Chang,Peng Han-Kuang,Tseng Hsueh-Chih,Huang Jheng-Jie,Yang Jyun-Bao,Chu Ann-Kuo,Young Tai-Fa,Sze Simon M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4812304

Reference24 articles.

1. A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

2. Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory

3. Developments in nanocrystal memory

4. Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application

5. Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

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1. MAPbBr₃ Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time;ACS Applied Materials & Interfaces;2024-01-03

2. Superior resistive switching performance in SnO2 nanoparticles embedded TiO2 nanorods-based thin films;Ceramics International;2023-06

3. Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device;ACS Applied Materials & Interfaces;2020-11-09

4. A method of generating random bits by using electronic bipolar memristor*;Chinese Physics B;2020-04-01

5. Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices;Chemistry;2019-03-21

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