Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3517489
Reference7 articles.
1. Schottky behavior at InN–GaN interface
2. Conduction band offset at the InN∕GaN heterojunction
3. Raman scattering in large single indium nitride dots: Correlation between morphology and strain
4. Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement
5. Temperature dependence of mobility and carrier density in InN films
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1. Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu;Journal of the Institute of Science and Technology;2022-12-01
2. Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS2/p-Si Heterojunction;ACS Applied Electronic Materials;2020-07-06
3. Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices;RSC Advances;2020
4. Electrical Characterization of InN Nanowire/Si Heterojunctions;physica status solidi (b);2019-03-18
5. Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates;Nanoscale Research Letters;2017-02-23
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