High voltage GaInP/GaAs dual-material Schottky rectifiers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119596
Reference10 articles.
1. Trends in power semiconductor devices
2. Semiconductors for high‐voltage, vertical channel field‐effect transistors
3. Electronic transport through semiconductor barriers
4. Band offset of GaAs-GaInP heterojunctions
5. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
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2. Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layer;Thin Solid Films;2004-12
3. InAs/GaP/InGaP high-temperature power Schottky rectifier;Applied Physics Letters;2004-04-12
4. Properties of Cu/Au Schottky contacts on InGaP layer;Journal of Applied Physics;2003-09-15
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